Electrochemical deposition of copper on patterned Cu/Ta(N)/SiO2 surfaces for super filling of sub-micron features

Journal of Applied Electrochemistry

Volumn 31, Issue 12, 2001, Pages 1395-1397

  Li, W H ^a   Ye, J H ^a,c   Li, S F Y ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

Cu electroplating; Cu interconnect; Electrochemical deposition of Cu; TaN barrier and integrated circuit

Indexed keywords

COPPER; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; PHYSICAL VAPOR DEPOSITION; SURFACES;

COPPER ELECTRODE POSITION; ELECTROMIGRATION RESISTANCE; SUBMICRON FEATURES;

ELECTROPLATING;

EID: 0035705737     PISSN: 0021891X     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1013872107905     Document Type: Article

References (6)