Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1830-1835

  Youk, G U ^a   Khare, P S ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN INDUCED BARRIER LOWERING; SHALLOW TRENCH ISOLATION; SHORT CHANNEL EFFECTS; TRENCH ISOLATION OXIDES;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; FIELD EFFECT TRANSISTORS; IONIZING RADIATION; IRRADIATION; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; THREE DIMENSIONAL;

RADIATION EFFECTS;

EID: 0033307563     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819161     Document Type: Article

References (17)

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