Advantages and limitations of silicon-on-insulator technology in radiation environments

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 335-342

  Schwank, J R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HARDNESS; MOSFET DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSIENTS; DOSIMETRY; INTEGRATED CIRCUIT MANUFACTURE; RADIATION HARDENING;

FLOATING BODY BIPOLAR EFFECTS; TOTAL DOSE RESPONSE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031150274     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00076-2     Document Type: Article

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