Suppression of parasitic MOSFETs at LOCOS edge region in partially depleted SOI MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1631-1635

  Yasuoka, Akihiko ^a   Iwamatsu, Toshiaki ^a   Ipposhi, Takashi ^a   Miyamoto, Shoichi ^a   Yamaguchi, Yasuo ^a   Inoue, Yasuo ^a   Miyoshi, Hirokazu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Fixed oxide charge; Hydrogenation; LOCOS; MOSFET; SOI

Indexed keywords

EID: 3743152864     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1631     Document Type: Article

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