Compact modeling of weak inversion generation transients in SOI MOSFETs

Journal of the Electrochemical Society

Volumn 151, Issue 6, 2004, Pages

  Ionescu, A M ^a   Munteanu, D ^b   Hefyene, N ^a   Anghel, C ^a  

^a EPFL   (Switzerland)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GLASS; MATHEMATICAL MODELS; OXIDATION; PHYSICAL VAPOR DEPOSITION; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; VLSI CIRCUITS;

COMPACT MODELS; DRAIN CURRENT TRANSIENTS; ELECTRON HOLE PAIR GENERATION;

MOSFET DEVICES;

EID: 2942638060     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1705662     Document Type: Article

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