Sub-band-gap impact ionization events in transient regimes of floating body SOI devices

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 371-374

  Ionescu, A M ^a,b   Chovet, A ^c  

^a EPFL   (Switzerland)

^b Stanford University   (United States)

^c Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; IONIZATION; SILICON ON INSULATOR TECHNOLOGY;

HOT ELECTRONS; IMPACT IONIZATION;

MOSFET DEVICES;

EID: 0033190232     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00408-6     Document Type: Article

References (4)

1. M.V. Fischetti and S.E. Laux, IEDM Tech. Dig. (1995) 305.
2. T. Saraya, M. Takamiya, T.N. Duyet and T. Hiramoto, Jpn. J. Appl. Phys, 37 (1998) 1271.
3. A. M. Ionescu, A. Chovet and F. Chaudier, MRS Proc., 490 (1998) 261.
4. nd Ed. Wiley, 1998