New measurement technique for sub-bandgap impact ionization current by transient characteristics of partially depleted SOI MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1271-1273

  Saraya, Takuya ^a   Takamiya, Makoto ^a   Duyet, Tran Ngoc ^a   Hiramoto, Toshiro ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Floating body effect; MOSFET; Partially depleted SOI; Silicon on insulator; Sub bandgap impact ionization; Transient measurement

Indexed keywords

EID: 0008534410     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1271     Document Type: Article

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