Interface engineering of a ZrO2/SiO2/Si layered structure by in situ reoxidation and its oxygen-pressure-dependent thermal stability

Applied Physics Letters

Volumn 78, Issue 24, 2001, Pages 3803-3805

  Watanabe, Heiji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035844422     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379357     Document Type: Article

References (11)

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9. 2, not substoichiometric oxide.
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11. 2/Si structure at 900 °C must be caused by local defects in the layered structure. The details will be described elsewhere.