Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection current

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3916-3918

  Hong, Chao Chi ^a   Liao, Wei Jian ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; MOS CAPACITORS; OXIDATION;

SUBSTRATE INJECTION CURRENT;

ELECTRIC CURRENTS;

EID: 0038307299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581004     Document Type: Article

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