Dielectric and electrical characteristics of titanium-modified Ta2O5 thin films deposited on nitrided polysilicon by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6812-6816

  Chang, Chich Shang ^a   Wu, Tai Bor ^a   Shih, Wong Cheng ^b   Chao, Lan Lin ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION   (Taiwan)

Author keywords

Chemical vapor deposition (CVD); Leakage current; Rapid thermal oxygen annealing (RTO); Tantalum oxide (Ta2O5)

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRODES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDING; OXYGEN; PERMITTIVITY; RAPID THERMAL ANNEALING; SILICON NITRIDE; TANTALUM COMPOUNDS; TITANIUM;

POLYSILICON; RAPID THERMAL OXYGEN ANNEALING; TANTALUM OXIDE;

THIN FILMS;

EID: 0033315999     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6812     Document Type: Article

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