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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 5957-5963

Breakdown modes and their evolution in ultrathin gate oxide

(3) Lin, Horng Chih a Lee, Da Yuan b Huang, Tiao Yuan a,b

a NATIONAL NANO DEVICE LABORATORIES (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Hard breakdown; Metal oxide semiconductor (MOS); Soft breakdown; Ultrathin gate oxide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); OXIDES; SEMICONDUCTING SILICON;

HARD BREAKDOWN; SOFT BREAKDOWN; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0036818875 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.5957 Document Type: Article

Times cited : (8)

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