SiGe bipolar transceiver circuits operating at 60 GHz

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 1, 2005, Pages 156-167

  Floyd, Brian A ^a   Reynolds, Scott K ^a   Pfeiffer, Ullrich R ^a   Zwick, Thomas ^a   Beukema, Troy ^a   Gaucher, Brian ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

60 GHz; Direct conversion receiver; Low noise amplifier (LNA); Millimeter wave bipolar integrated circuits; Mixer; Power amplifier; SiGe; V band; Voltage controlled oscillator (VCO)

Indexed keywords

BROADBAND AMPLIFIERS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; OSCILLATORS (ELECTRONIC); SPURIOUS SIGNAL NOISE; TRANSCEIVERS;

60 GHZ; DIRECT-CONVERSION RECEIVER (DCR); LOW-NOISE AMPLIFIER (LNA); MILLIMETER-WAVE BIPOLAR INTEGRATED CIRCUITS; POWER AMPLIFIERS (PA); V-BAND; VOLTAGE-CONTROL OSCILLATOR (VCO);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 11944257500     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.837250     Document Type: Conference Paper

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