A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 877-880

  Baeyens, Y ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; TUNING; VARIABLE FREQUENCY OSCILLATORS;

PHASE NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042594388     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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2. F. Sinnesbichler, "SiGe HBT push-push oscillators for V-band operation", Digest 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 55-59, 2000.
3. C. Nicholls, "Extension of the frequency range of ceramic resonator oscillators using push-push circuit topology", Proc. of the 2001 IEEE International Frequency Control Symposium and PDA Exhibition, pp. 728-733, 2001
4. F. Sinnesbichler, B. Hautz, G. Olbrich, "Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output", 2000 IEEE MTT-S International Microwave Symposium Digest, Vol. 1, pp. 35-38, 2000.
5. S. Kudszus et al., "Push-push oscillators for 94 and 140 GHz applications using standard pseudomorphic GaAs HEMTs", 2001 IEEE MTT-S International Microwave Symposium Digest, pp. 1571-1574, Vol. 3, 2001.
6. K. Kobayashi et al., "A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth", IEEE Journal of Solid-State Circuits, Vol. 34, No. 9, pp. 1225-1232, Sept. 1999.
7. Y. Baeyens et al., "Compact InP-based HBT VCOs with a wide tuning range at W- and D-band", IEEE Trans. on Microwave Theory and Techniques, Vol. 48, No. 12, pp. 2403-2408, December 2000.
8. Y. Baeyens et al., "InP D-HBT IC's for 40-Gb/s and higher bitrate transceivers", IEEE Journal of Solid-State Circuits, Vol. 37, No. 9, pp. 1152-1159, Sept. 2002.
9. T in a manufacturable technology, IEEE Electron Device Letters, Vol. 23, No. 5, pp. 258-260, May 2002.
10. K. Washio et al., "Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers", IEEE Trans. On Electron Devices, Vol. 49, no. 10, pp. 1755-1760, October 2002.
11. J. Mourant, J. Imbornone, T. Tewksbury, "A low phase noise monolithic VCO in SiGe BiCMOS", Digest of 2000 IEEE RFIC Symposium, pp. 65-68, 2000.