Design of W-band VCOs with high output power for potential application in 77 GHz automotive radar systems

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 263-266

  Li, H ^a   Rein, H M ^a   Suttorp, T ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE ELECTRONIC EQUIPMENT; BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; MICROPROCESSOR CHIPS; MICROSTRIP LINES; RADAR SYSTEMS; RESONANT CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS;

AUTOMOTIVE RADAR SYSTEMS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0347566225     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252408     Document Type: Conference Paper

References (9)

1. M. Rickelt and H.-M. Rein, "A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits", IEEE J. Solid-State Circ., 37, pp. 1184-1197, 2002.
2. M. Camiade, "MMICs provide the key for lower-cost automotive radar", Compound Semicond., pp. 31-33, May, 1998.
3. H. Li, H.-M. Rein, and M. Schwerd, "SiGe VCOs operating up to 88 GHz, also suited for automotive radar sensors", Electronic Letters, 39, 2003.
4. H. Li and H.-M. Rein, "Millimetre-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology", IEEE J. Solid-State Circ., 38, pp. 184-191, 2003.
5. T SiGe:C bipolar RF technology", Proc. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Apr. 2003, Grainau (Germany), pp. 10-13.
6. H. Li, H.-M. Rein, R.-E. Makon, "Wide-Band VCOs in SiGe production technology operating up to about 70 GHz", IEEE Microwave and Wireless Comp. Letters, 13, Oct. 2003.
7. Steve C. Cripps, RF power amplifiers for wireless communications, Artech House, 1999.
8. H.-M. Rein and M. Möller, "Design considerations for very-high-speed Si-bipolar ICs operating up to 50 Gb/s", IEEE J. Solid-State Circ., 31, pp. 1076-1090, 1996.
9. R. Schmid, T.F. Meister, M. Rest, H.-M. Rein, "SiGe driver circuit with high output amplitude operating up to 23 Gb/s", IEEE J. Solid-State Circ., 34, pp. 886-891, 1999.