Compact LNA and VCO 3-D MMICs using commercial GaAs PHEMT technology for V-band single-chip TRX MMIC

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1717-1720

  Nishikawa, Kenjiro ^a   Piernas, Belinda ^a   Kamogawa, Kenji ^a   Nakagawa, Tadao ^a   Araki, Katsuhiko ^a  

^a NTT Network Innovation Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCEIVERS; VARIABLE FREQUENCY OSCILLATORS;

LOW NOISE AMPLIFIER; OSCILLATION FREQUENCY TUNING; V-BAND HIGHLY INTEGRATED SINGLE CHIP TRANSCEIVER;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0036070207     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMICs
2. New methodology for microwave/millimeter-wave MMIC development
3. Three-dimensional passive circuit technology for ultra-compact MMICs
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5. GaAs HEMT monolithic voltage-controlled oscillators at 20 and 30 GHz incorporating Schottky-varactor frequency tuning
6. Investigation of device low frequency noise in 28 GHz MMIC VCO
7. Ka-band and MMIC pHEMT-based VCO's with low phase-noise properties
8. Ka-band monolithic GaAs pHEMT circuits for transceiver applications
9. Ka-band MMIC voltage-controlled oscillators
10. 35-40 GHz monolithic VCO's utilizing high-speed GaInP/GaAs HBT's
11. 38 GHz low phase noise CPW monolithic VCO's implemented in manufacturable AlInAs/InGaAs HBT IC technology