23GHz front-end circuits in SiGe BiCMOS technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 99-102

  Li, Yinggang ^a   Bao, Mingquan ^a   Ferndahl, Mattias ^b   Cathelin, Andreia ^c  

^a Ericsson Microwave Systems AB   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MIXER CIRCUITS; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

LOW NOISE CONVERTERS (LNC);

CMOS INTEGRATED CIRCUITS;

EID: 0042591278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. H. Baudry, et al., "High performance 0.25μm SiGe and SiGe:C HBTs using non selective epitaxy," Proc. of the IEEE BCTM 2001, pp.52-55, October 2001.
2. G. Schuppener, T. Harada and Y. Li, "A 23-GHz Low-Noise Amplifier in SiGe Heterojunction Bipolar technology", 2001 IEEE RFIC Symp. Dig., pp.177-180, May 2001.
3. K. Yamauch, et al., "A microwave miniaturized linearizer using a parallel diode with a bias feed resistance", IEEE Trans. Microwave Theory and Tech., vol.45, no.12, pp.2431-2434, 1997.
4. S. Hackl and J. Böck, "31 GHz monolithic integrated quadrature demodulator in SiGe bipolar technology," Proc. of Asia-Pacific Microwave Conf., vol.2, pp.846-848, November 2002.
5. E. Sönmez, A. Trasser, K.-B. Schad, P. Abele, and H. Schumacher, "A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process," 2002 IEEE RFIC Symp. Dig., pp.159-162, June 2002.