Bias circuits for GaAs HBT power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 507-510

  Järvinen, Esko ^a   Kalajo, Sami ^a   Matilainen, Mikko ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; VOLTAGE CONTROL;

BIAS CIRCUITS; BIAS VOLTAGE VARIATION;

POWER AMPLIFIERS;

EID: 0035692497     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Advances in GaAs HBT power amplifiers for cellular phones and military applications
2. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors
3. A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications
4. GaAs HBT power amplifier with smooth gain control characteristics
5. A 900 MHz HBT power amplifier MMICs with 55% efficiency, at 3.3 V operation
6. An integrated 900-MHz push-pull amplifier for mobile applications
7. Radio frequency amplifiers