40 GHz monolithic integrated mixer in SiGe bipolar technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1241-1244

  Hackl, Sabine ^a,b   Böck, Josef ^a   Wurzer, Martin ^a   Scholtz, Arpad L ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIPOLAR TRANSISTORS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; NATURAL FREQUENCIES; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

MONOLITHIC INTEGRATED MIXER; SELF-ALIGNED EMITTER-BASE CONFIGURATION;

MIXER CIRCUITS;

EID: 0036067877     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011884     Document Type: Article

References (10)

1. 30 GHz active mixer in Si/SiGe bipolar technology
2. 20 GHz 5 dB gain analog multipliers with AlGaAs/GaAs HBTs
3. 15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range
4. Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology
5. Benefits of SiGe over silicon bipolar technology for broadband mixers above 10 GHz
6. Gilbert multiplier as an active mixer with conversion gain bandwidth of up to 17 GHz
7. Silicon bipolar double balanced active mixer MMICs for RF and microwave applications up to 6GHz
8. Low-power low-noise active mixers for 5.7 and 11.2 GHz using commercially available SiGe HBT MMIC technology
9. SiGe base bipolar technology for mixed digital and analogue RF applications
10. Fundamental aspects of modern active mixer design