High performance 60-GHz coplanar MMIC LNA using InP heterojunction FETs with AlAs/InAs superlattice layer

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 21-24

  Fujihara, A ^a   Mizuki, E ^a   Miyamoto, H ^a   Makino, Y ^a   Yamanoguchi, K ^a   Samoto, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM PHOSPHIDE HETEROJUNCTION FIELD EFFECT TRANSISTOR; LOW NOISE AMPLIFIER;

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

MICROWAVE AMPLIFIERS;

EID: 0033710458     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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