60GHz and 76GHz oscillators in 0.25μm SiGe:C BiCMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2003, Pages

  Winkler, Wolfgang ^a   Borngräber, Johannes ^a   Heinemann, Bernd ^a   Weger, Peter ^b  

^a IHP   (Germany)

^b Brandenburg TU   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE ELECTRONIC EQUIPMENT; BIPOLAR INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; MILLIMETER WAVES; RADAR; RESONATORS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; TUNING; VARIABLE FREQUENCY OSCILLATORS;

AUTOMOTIVE RADAR; PHASE NOISE; SILICON GERMANIUM;

CMOS INTEGRATED CIRCUITS;

EID: 0037968904     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Tiebout, et al., "A 1 V 51GHz Fully-Integrated VCO in 0.12μm CMOS," ISSCC Digest of Technical Papers, vol. 45 pp. 300-301, Feb. 2002.
2. D. Knoll, et al., "BiCMOS Integration of SiGe:C Heterojunction Bipolar Transistors," BCTM Digest of Technical Papers, Sept. 2002, pp. 162-166.
3. K. Kobayashi, et al., "A 108-GHz InP-HBT Monolithic Push-Push VCO with Low Phase Noise and Wide Tuning Bandwidth," IEEE J. Solid State Circuits, vol. 34, no.9, Sept. 1999, pp. 1225-1232.
4. W. Winkler, et al., "High-performance and low-voltage divider circuits fabricated in SiGe:C HBT technology," ESSCIRC Digest of Technical Papers, Sept. 2002, pp. 827-830.
5. U. Rohde, D. Newkirk, "RF/Microwave Circuit Design for Wireless Applications," New York, Wiley, 2000.