The relentless march of the MOSFET gate oxide thickness to zero

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 557-562

  Timp, G ^a   Bude, J ^a   Baumann, F ^a   Bourdelle, K K ^a   Boone, T ^a   Garno, J ^a   Ghetti, A ^a   Green, M ^a   Gossmann, H ^a   Kim, Y ^a   Kleiman, R ^a   Kornblit, A ^a   Klemens, F ^a   Moccio, S ^a   Muller, D ^a   Rosamilia, J ^a   Silverman, P ^a   Sorsch, T ^a   Timp, W ^b   Tennant, D ^a   Tung, R ^a   Weir, B ^a   more..

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8644285647     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00257-7     Document Type: Article

References (4)

1. Timp G, Bourdelle KK, Bower JE, Baumann FH, Boone T, Cirelli R, Evans-Lutterodt K, Garno J, Ghetti A, Gossmann H, Green M, Jacobson D, Kim Y, Kleiman R, Klemens F, Kornblit A, Lochstampfor C, Mansfield W, Moccio M, Muller DA, Ocola L, O'Malley M, Rosamilia J, Sapjeta J, Silverman P, Sorsch T, Tennant DM, Timp W, Weir BM. IEDM Tech Dig, 1998. p. 615-8.
2. Ghetti A, Hamad A, Silverman PJ, Vaidya H, Zhao N. Proceedings of the 1999 International Conference on Simulation of Semiconductor Processes and Devices (SI-SPAD). p. 239.
3. Muller DA, Sorsch T, Moccio S, Baumann FH, Evans-Lutterodt K, Timp G. Nature 1999;399:758-61.
4. Aoyama T, Suzuki K, Tashiro H, Tada Y, Arimoto H. IEDM Tech Dig, 1997. p. 627-30.