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Physica Status Solidi (B) Basic Research

Volumn 202, Issue 1, 1997, Pages 263-279

Homoepitaxial VPE growth of SiC active layers

(2) Burk Jr , A A a Rowland, L B a

a NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039918352 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(199707)202:1<263::aid-pssb263>3.0.co;2-y Document Type: Article

Times cited : (48)

References (48)

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