Stability criteria for 4H-SiC bulk growth

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 25-28

  Straubinger, T L ^a   Bickermann, M ^a   Hofmann, D ^a   Weingartner R ^a   Wellmann, P J ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL GROWTH; CRYSTALLIZATION; PRESSURE; STABILITY; SUPERSATURATION; THERMAL GRADIENTS; VAPORS;

BULK GROWTH; CRITICAL TEMPERATURE; POLYTYPE INSTABILITIES; SEED SURFACE TEMPERATURE;

SILICON CARBIDE;

EID: 14344282423     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.25     Document Type: Article

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