SCOPUS 정보 검색 플랫폼

Volumn 338, Issue , 2000, Pages

Multi-wafer VPE growth and characterization of SiC epitaxial layers

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBSTRATES; VAPOR PHASE EPITAXY;

MULTI-WAFER REACTOR; STATIC INDUCTION TRANSISTORS (SIT);

SILICON CARBIDE;

EID: 0033715399 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (3)

References (9)

1
- 0030182811
- S. Sriram, G. Augustine, A. A. Burk, Jr., R.C. Glass, H. M. Hobgood, P. A. Orphanos, L.V. Rowland, T. J. Smith, C. D. Brandt, M. C. Driver, and R. H. Hopkins, IEEE Electron Device Lett., EDL-17, (1996) p. 369.
- (1996) IEEE Electron Device Lett. , vol.EDL-17 , pp. 369
- Sriram, S.¹ Augustine, G.² Burk Jr., A.A.³ Glass, R.C.⁴ Hobgood, H.M.⁵ Orphanos, P.A.⁶ Rowland, L.V.⁷ Smith, T.J.⁸ Brandt, C.D.⁹ Driver, M.C.¹⁰ Hopkins, R.H.¹¹

2
- 0040788416
- Kyoto, Japan
- R. R. Siergiej, S. Sriram, R. C. Clarke, A. K. Agarwal, C. D. Brandt, A. A. Burk, Jr., T. J. Smith, A Morse, and P. A. Orphanos, Tech. Digest Int. Conf. SiC and Rel Mat'95, (Kyoto, Japan 1995), p. 321.
- (1995) Tech. Digest Int. Conf. SiC and Rel Mat'95 , pp. 321
- Siergiej, R.R.¹ Sriram, S.² Clarke, R.C.³ Agarwal, A.K.⁴ Brandt, C.D.⁵ Burk Jr., A.A.⁶ Smith, T.J.⁷ Morse, A.⁸ Orphanos, P.A.⁹

3
- 12944314129
- accepted for publication
- A. A. Burk, Jr., M. J. O'Loughlin, R. R. Siergiej, A. K. Agarwal, S. Sriram, R. C. Clarke, M. F. MacMillan, V. Balakrishna, and C. D. Brandt, J. Solid State Electronics, accepted for publication.
- J. Solid State Electronics
- Burk Jr., A.A.¹ O'Loughlin, M.J.² Siergiej, R.R.³ Agarwal, A.K.⁴ Sriram, S.⁵ Clarke, R.C.⁶ MacMillan, M.F.⁷ Balakrishna, V.⁸ Brandt, C.D.⁹

4
- 12944292255
- Aixtron Inc. Kackerstr. 15-17, D-52072 Aachen, Germany
- Aixtron Inc. Kackerstr. 15-17, D-52072 Aachen, Germany.

5
- 0024104034
- P. M. Frijlink, J. Crystal Growth, 93, (1988) p. 207.
- (1988) J. Crystal Growth , vol.93 , pp. 207
- Frijlink, P.M.¹

6
- 0032660207
- A. A. Burk, Jr., M. J. O'Loughlin, and H. D. Nordby, Jr., J. Crystal Growth, 200, (1999) p. 458-466.
- (1999) J. Crystal Growth , vol.200 , pp. 458-466
- Burk Jr., A.A.¹ O'Loughlin, M.J.² Nordby Jr., H.D.³

7
- 0344356036
- Silicon Carbide, III-Nitrides, and Related Materials, Switzerland
- A. A. Burk, Jr., M. J. O'Loughlin, and S. S. Mani, in Silicon Carbide, III-Nitrides, and Related Materials, Materials Science Forum, 264-268, (Switzerland 1998), p. 83-88.
- (1998) Materials Science Forum , vol.264-268 , pp. 83-88
- Burk Jr., A.A.¹ O'Loughlin, M.J.² Mani, S.S.³

8
- 12944261273
- San Francisco, April 5-9
- M. J. O'Loughlin , H.D. Nordby, Jr., and A. A. Burk, Jr., 1999 MRS Spring Meeting, San Francisco, April 5-9.
- 1999 MRS Spring Meeting
- O'Loughlin, M.J.¹ Nordby Jr., H.D.² Burk Jr., A.A.³

9
- 0031675630
- Silicon Carbide, III-Nitrides, and Related Materials, Switzerland
- M. F. MacMillan, P. O. Narfgren, A. Henry, and E. Janzen, in Silicon Carbide, III-Nitrides, and Related Materials, Materials Science Forum, 264-268, (Switzerland 1998), p. 645-648
- (1998) Materials Science Forum , vol.264-268 , pp. 645-648
- MacMillan, M.F.¹ Narfgren, P.O.² Henry, A.³ Janzen, E.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.