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Volumn 264-268, Issue PART 1, 1998, Pages 115-118

Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

Author keywords

Doping; Epitaxial Growth; Nitrogen; Vapor Phase Epitaxy

Indexed keywords

NITROGEN; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

PROPANE MOLE FRACTION;

SILICON CARBIDE;

EID: 0031674097 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.115 Document Type: Article

Times cited : (12)

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