Experimental studies of hollow-core screw dislocations in 6H-SiC and 4H-SiC single crystals

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 429-432

  Si, W ^a   Dudley, M ^a   Glass, R ^b   Tsvetkov, V ^b   Carter Jr , C H ^b  

^a Stony Brook University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; 6H SiC; Hollow Core Screw Dislocations; Micropipes

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACIAL ENERGY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; STATISTICAL METHODS;

MICROPIPES; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY (SWBXT);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031648293     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.429     Document Type: Article

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