Al/C/B co-implanted high-voltage 4H-SiC PiN junction rectifiers

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Fedison, J B ^a   Li, Z ^a   Khemka, V ^a   Ramungul, N ^a   Chow, T P ^a   Ghezzo, M ^b   Kretchmer, J W ^b   Elasser, A ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTRATES;

BLOCKING VOLTAGES; HIGH-VOLTAGE JUNCTION RECTIFIERS; REVERSE RECOVERY METHOD;

SOLID STATE RECTIFIERS;

EID: 0033721915     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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