Accurate Monte Carlo simulation of fluorine and BF2 ion implantation into crystalline silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 3-4, 2004, Pages 403-412

  Tian, Shiyang ^a  

^a SYNOPSYS INC   (United States)

Author keywords

Boron difluoride; Fluorine; Ion implantation; Monte Carlo simulation; Positron annihilation spectroscopy; Taurus process

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; BORON COMPOUNDS; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTALS; FLUORINE; MOLECULAR DYNAMICS; MONTE CARLO METHODS; POSITRON ANNIHILATION SPECTROSCOPY; SILICON WAFERS; SIMULATORS; STOICHIOMETRY;

BORON DIFLUORIDES; RANDOM NUMBERS; TAURUS-PROCESS;

ION IMPLANTATION;

EID: 0942289563     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.09.014     Document Type: Article

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