Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Applied Physics Letters

Volumn 78, Issue 22, 2001, Pages 3442-3444

  Pellegrino, P ^a   Leveque P ^a   Wong Leung, J ^b   Jagadish, C ^b   Svensson, B G ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035926895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1374960     Document Type: Article

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