A universal ion implantation model for all species into single-crystal silicon

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1519-1525

  Chen, Yang ^a,d   Wang, Geng ^a,b,c   Li, Di ^b   Oak, Stimit K ^b,e   Shrivastav, Gaurav ^b,e   Rubin, Leonard ^f   Tasch, Al F ^a,b   Banerjee, Sanjay Kumar ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c IBM   (United States)

^d ADVANCED MICRO DEVICES   (United States)

^e SUN MICROSYSTEMS   (United States)

^f AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURACY; COMPUTATIONAL EFFICIENCY; INTERATOMIC POTENTIAL; SINGLE CRYSTAL SILICON; SOFTWARE PACKAGE UT-MARLOWE;

ALGORITHMS; COMPUTER SIMULATION; ELECTRON SCATTERING; INTERPOLATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

ION IMPLANTATION;

EID: 0036715116     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801300     Document Type: Article

References (12)

1. Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)
2. Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon
3. Low energy model for ion implantation of arsenic and boron into (100) single-crystal silicon
4. Channeling effects
5. Computer simulation of atomic displacement cascades in solid in the binary-collision approximation
6. 2 implants into (100) single-crystal silicon
7. Computer simulation of channeling implantation at high and medium energies
8. Penetration of atomic matters through metal
9. Range concept and heavy ion ranges
10. Monte Carlo simulation of ion implantation into topographically complex structures