Towards a comprehensive model of electronic stopping in amorphous crystalline silicon

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 209-212

  Hobler, G ^a   Murthy, C S ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NUMBERS; COMPREHENSIVE MODEL; CRYSTALLINE SILICONS; ELECTRONIC STOPPING; ELECTRONIC STOPPING POWER; EXPERIMENTAL DATA; HYBRID MODEL; ION TRANSMISSION; NONLOCAL; RANGE PROFILES; STOPPING POWER; WIDE ENERGY RANGE;

ATOMS; ION IMPLANTATION;

AMORPHOUS SILICON;

EID: 78649872659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924126     Document Type: Conference Paper

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