A detailed physical model for ion implant induced damage in silicon

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1226-1238

  Tian, Shiyang ^a,c   Morris, Michael F ^a   Morris, Steven J ^b   Obradovic, Borna ^a   Wang, Geng ^b   Tasch, Al F ^a   Snell, Charles M ^a  

^a The University of Texas at Austin   (United States)

^b Avant TCAD Business Unit   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Implant induced damage; Ion implantation; Ion radiation effects; Modeling; Monte carlo methods

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ION IMPLANTATION; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SINGLE CRYSTALS;

IMPLANT INDUCED DAMAGE; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0032099104     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678523     Document Type: Article

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