Fluorine-assisted super-halo for sub-50-nm transistors

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 180-182

  Liu, Kaiping ^a   Wu, Jeff ^a   Chen, Jihong ^a   Jain, Amitabh ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Fluorine; Halo; Junction capacitance; MOSFET

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRON TUNNELING; FLUORINE; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON WAFERS;

FLUORINE-ASSISTED SUPER-HALO; HALO DOPANT DIFFUSIVITY; HEAVILY DOPED DRAIN EXTENSION; JUNCTION CAPACITANCE; SOFTWARE PACKAGE TCAD; SUPER-SHARP HALO; TUNNELING CURRENT;

MOSFET DEVICES;

EID: 0037600578     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809532     Document Type: Letter

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