Secondary defects in 1-10 keV As- and BF2-implanted Si

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 744-747

  Tamura, M ^a   Hiroyama, Y ^a   Nishida, A ^a  

^a JRCAT   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ARSENIC; BORON COMPOUNDS; ION BOMBARDMENT; ION IMPLANTATION; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

SELF INTERSTITIAL DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033356850     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)