Fluorine implantation effect on boron diffusion in Si

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 803-806

  Park, Yong Jik ^a,b   Kim, Jong Jean ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007551935     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369163     Document Type: Article

References (26)

1. A. E. Michel, W. Rausch, and P. A. Ronsheim, Appl. Phys. Lett. 51, 487 (1984).
2. A. E. Michel, W. Rausch, P. A. Ronsheim, and R. H. Kastl, Appl. Phys. Lett. 50, 416 (1987).
3. K. Cho, M. Numan, T. G. Finstard, W. K. Chu, J. Liu, and J. J. Wortman, Appl. Phys. Lett. 47, 1321 (1985).
4. P. A. Packan and J. D. Plummer, Appl. Phys. Lett. 56, 1787 (1990).
5. F. Cembali, M. Servidori, E. Landi, and S. Solmi, Phys. Status Solidi A 94, 315 (1986).
6. N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, and D. W. E. Vandenhoudt, Appl. Phys. Lett. 65, 2981 (1994).
7. N. E. B. Cowern, G. F. A. van de Walle, D. J. Graversteijn, and C. J. Vriezema, Phys. Rev. Lett. 67, 212 (1991).
8. N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, and D. J. Oostra, Phys. Rev. Lett. 69, 116 (1992).
9. R. G. Wilson, J. Appl. Phys. 54, 6879 (1983).
10. M. Y. Tsai and B. G. Streetman, J. Appl. Phys. 50, 183 (1979).
11. L. Ya. Krasnobaev, N. M. Omelyanovskaya, and V. V. Makarov, J. Appl. Phys. 74, 6020 (1993).
12. K. Ohiyu, T. Itoga, and N. Natsuaki, Jpn. J. Appl. Phys., Part 1 29, 457 (1990).
13. M. C. Paek, H. B. Im, and J. Y. Lee, J. Mater. Sci. 26, 2603 (1991).
14. T. Kinoshita, M. Takakura, S. Miyazaki, and S. Yokoyama, Jpn. J. Appl. Phys., Part 2 29, L2349 (1990).
15. G. Fuse, T. Hirao, K. Inoue, S. Takayanagi, and Y. Yaegashi, J. Appl. Phys. 53, 3650 (1982).
16. M. Servidori, R. Angelucci, F. Cembali, P. Negrini, S. Solmi, P. Zaumseil, and U. Winter, J. Appl. Phys. 61, 1834 (1987).
17. M. Y. Tsai and B. G. Streetman, J. Appl. Phys. 50, 188 (1979).
18. T. O. Sedgwick, A. E. Michel, V. R. Deline, S. A. Cohen, and J. B. Lasky, J. Appl. Phys. 63, 1452 (1988).
19. R. B. Fair, IEEE Trans. Electron Devices 35, 285 (1988).
20. G. S. Oehrlein, R. Ghez, J. D. Fehribach, E. F. Gorey, T. O. Sedgwick, S. A. Cohen, and V. R. Deline, in Proceedings of the 13th International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr. (Metallurgical Society of AIME, Warrenda, PA, 1984), p. 539.
21. S.-P. Jeng, T.-P. Ma, R. Canter, M. Anderle, and G. W. Rubloff, Appl. Phys. Lett. 61, 1310 (1992).
22. A. Ourmazd, W. Schroeter, and A. Bourret, J. Appl. Phys. 56, 1670 (1984).
23. L. Y. Wei, J. Phys. Chem. Solids 18, 162 (1961);
24. Atomic Diffusion in Semiconductors, edited by D. Shaw (Plenum, New York, 1973), p. 272.
25. G. Fuse, T. Hirao, S. Takayanagi, and Y. Yaegashi, J. Appl. Phys. 53, 3650 (1982).
26. J. Kato, J. Electrochem. Soc. 137, 1918 (1990).