Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si

Applied Physics Letters

Volumn 80, Issue 19, 2002, Pages 3530-3532

  Mokhberi, Ali ^a   Kasnavi, Reza ^a   Griffin, Peter B ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DIFFUSIONS; BURIED DOPANT; BURIED LAYER; CHEMICAL EFFECT; IMPLANT DAMAGE; INTERSTITIALS; PEAK CONCENTRATIONS; PRE-AMORPHIZATION; SECONDARY ION MASS SPECTROSCOPY; SELF-INTERSTITIAL; SI SELF-INTERSTITIAL; UNDOPED SILICON;

ARSENIC; BORON; BORON COMPOUNDS; CHEMICAL ANALYSIS; DIFFUSION IN SOLIDS; INDICATORS (CHEMICAL); POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

FLUORINE;

EID: 79955989428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1479458     Document Type: Article

References (14)

1. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Y. E. Erokhin, Appl. Phys. Lett. 71, 3141 (1997). apl APPLAB 0003-6951
2. J. Liu, V. Krishnamoorthy, H.-J. Gossmann, L. Rubin, M. E. Law, and K. S. Jones, J. Appl. Phys. 81, 1656 (1997). jap JAPIAU 0021-8979
3. A. Agarwal, D. J. Eaglesham, H.-J. Gossmann, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, Y. E. Erokhin, and R. Simonton, Tech. Dig.- Int. Electron Devices Meet., 467 (1997).
4. H. C. Wang, C. C. Wang, C. S. Chang, T. Wang, P. B. Griffin, and C. H. Diaz, IEEE Electron Device Lett. 22, 65 (2001). edl EDLEDZ 0741-3106
5. L. Shao, X. Lu, X. Wang, I. Rusakova, J. Liu, and W. K. Chu, Appl. Phys. Lett. 78, 2321 (2001). apl APPLAB 0003-6951
6. C. M. Osburn, D. F. Downey, S. B. Felch, and B. S. Lee, Proceedings of the 11th International Conference on Ion Implantation Technology, Austin, TX, 1997, p. 607.
7. D. F. Downey, S. L. Daryanani, M. Meloni, K. M. Brown, S. B. Felch, B. S. Lee, S. D. Marcus, and J. Gelpy, Mater. Res. Soc. Symp. Proc. 470, 299 (1997). mrs MRSPDH 0272-9172
8. T. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furuhashi, and K. Taniguchi, Tech. Dig.- Int. Electron Devices Meet., 821 (2001).
9. D. F. Downey, J. W. Chow, E. Ishida, and K. S. Jones, Appl. Phys. Lett. 73, 1263 (1998). apl APPLAB 0003-6951
10. J. Liu, D. F. Downey, K. S. Jones, E. Ishida, Proceedings of International Conference on Ion Implantation Technology, Kyoto, Japan, 1998, p. 951.
11. K. S. Jones, L. H. Zhang, V. Krishnamoorthy, M. Law, S. S. Simons, P. Chi, L. Rubin, and R. G. Elliman, Appl. Phys. Lett. 68, 2672 (1996). apl APPLAB 0003-6951
12. K. S. Jones, K. Moller, J. Chen, M. Puga-Lambers, B. Freer, J. Berstein, and L. Rubin, J. Appl. Phys. 81, 6051 (1997). jap JAPIAU 0021-8979
13. UT-MARLOWE 5.0, University of Texas.
14. J. Fletcher, J. Narayam, and O. W. Holland, Proceedings of the Second Oxford Conference, Oxford, UK, 1981, p. 295.