Realization of ultra-shallow junction: Suppressed boron diffusion and activation by optimized fluorine co-implantation

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 821-824

  Shano, Toshifumi ^a   Kim, Ryangsu ^a   Hirose, Tetsuya ^a   Furuta, Yoshikazu ^a   Tsuji, Hiroshi ^a   Furuhashi, Masayuki ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ATOMS; CHEMICAL ACTIVATION; DIFFUSION IN SOLIDS; FLUORINE; OPTIMIZATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

BORON DELTA DOPED SUPERLATTICE; ULTRASHALLOW JUNCTION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0035714645     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979640     Document Type: Article

References (5)