Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation

Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1248-1250

  Park, Jihwan ^a   Huh, Yun Jun ^a,b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001519431     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123514     Document Type: Review

References (9)

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