Scaling and Strain Dependence of Nanoscale Strained-Si p-MOSFET Performance

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2461-2466

  Bufler, F M ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Ballistic transport; Monte Carlo methods; MOSFET scaling; P MOSFET; Strained silicon; Velocity overshoot

Indexed keywords

ALGORITHMS; BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); MONTE CARLO METHODS; PHONONS; PROBABILITY; SURFACE ROUGHNESS; TENSILE STRESS;

BALLISTIC TRANSPORT; VELOCITY OVERSHOOT;

MOSFET DEVICES;

EID: 0346076867     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819655     Document Type: Review

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