Full band monte-carlo device simulation of 0.1 - 0.5μm strained-Si P MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 312-315

  Keith, S ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

CHANNEL LENGTH; DEVICE SIMULATIONS; DEVICE SIMULATORS; FULL-BAND MONTE CARLO; P-CHANNEL MOS; PERFORMANCE ENHANCEMENTS; STRAINED-SI; SURFACE CHANNEL;

SEMICONDUCTING SILICON;

EID: 84908209696     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. D. K. Nayak and S. K. Chun, Appl. Phys. Lett. 64, 2514 (1994).
2. D. K. Nayak, et al., IEEE Trans. Electron Devices 43,1709 (1996).
3. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
4. F. M. Buffer, P. Graf, and B. Meinerzhagen, Proc. IWCE (Notre Dame, Indiana (USA), 1997), p. WeA9.
5. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
6. E. Sangiorgi and M. R. Pinto, IEEE Trans. Electron Devices 39,356 (1992).
7. S.Takagi, M. Iwase, and A. Toriumi, IEDM Tech. Dig. (1988), pp. 398-401.
8. C. K. Maiti, et al., Solid-State Electron. 41, 1863 (1997).
9. K. Rim, J. Welser, J. L. Hoyt, and J. F. Gibbons, IEDM Tech. Dig. (1995), pp. 517-520.
10. S. Keith, F. M. Buffer, and B. Meinerzhagen, Proc. ESSDERC (Stuttgart, 1997), pp. 200-203.