Hole and electron transport in strained Si: Orthorhombic versus biaxial tensile strain

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 82-84

  Bufler, F M ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; BIAXIAL TENSILE STRAIN; DRIFT MOBILITIES; ELECTRON TRANSPORT; GE CONTENT; NON-LINEAR REGIMES; SIGE LAYERS; STRAINED-SI; VELOCITY OVERSHOOT;

BALLISTICS; GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

TENSILE STRAIN;

EID: 79956010415     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491283     Document Type: Article

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