Proof of a simple time-step propagation scheme for Monte Carlo simulation

Mathematics and Computers in Simulation

Volumn 62, Issue 3-6, 2003, Pages 323-326

  Bufler, F M ^a   Schenk, A ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Monte Carlo algorithm; Semiconductors; Simulation

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; MONTE CARLO METHODS; PROBABILITY;

TIME-STEP PROPAGATION;

INTEGRODIFFERENTIAL EQUATIONS;

EID: 0037417028     PISSN: 03784754     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4754(02)00220-3     Document Type: Conference Paper

References (10)

1. C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer, Wien, 1989.
2. K. Hess (Ed.), Monte Carlo Device Simulation: Full Band and Beyond, Kluwer Academic Publishers, Boston, 1991.
3. Fischetti M.V., Laux S.E., Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Phys. Rev. B. 38:1988;9721-9745.
4. Rees H.D., Calculation of steady state distribution functions by exploiting stability. Phys. Lett. A. 26:1968;416-417.
5. Bude J., Smith R.K., Phase-space simplex Monte Carlo for semiconductor transport. Semicond. Sci. Technol. 9:1994;840-843.
6. 2: an efficient Monte Carlo simulator for MOS devices IEEE Trans. Computer-Aided Des. 7:1988;259-271.
7. Jungemann C., Keith S., Bartels M., Meinerzhagen B., Efficient full-band Monte Carlo simulation of silicon devices. IEICE Trans. Electron. E82-C:1999;870-879.
8. Fawcett W., Boardman A.D., Swain S., Monte Carlo determination of electron transport properties in gallium arsenide. J. Phys. Chem. Solids. 31:1970;1963-1990.
9. Reklaitis A., The calculation of electron transient response in semiconductors by the Monte Carlo technique. Phys. Lett. A. 88:1982;367-370.
10. Bufler F.M., Schenk A., Fichtner W., Efficient Monte Carlo device modeling. IEEE Trans. Electron Devices. 47:2000;1891-1897.