Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 426-434

  Takagi, S ^a   Sugiyama, N ^a   Mizuno, T ^a   Tezuka, T ^a   Kurobe, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Lattice relaxation; MOSFET; SiGe; SOI; Strained Si

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HIGH TEMPERATURE EFFECTS; HOLE MOBILITY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

LATTICE RELAXATION;

MOSFET DEVICES;

EID: 0037074814     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00851-0     Document Type: Conference Paper

References (31)