Hole Transport in Orthorhombically Strained Silicon

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 175-177

  Bufler, F M ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

hole transport; Monte Carlo simulation; orthorhombically strained Si

Indexed keywords

HOLE MOBILITY; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; MOSFET DEVICES; SI-GE ALLOYS; TENSILE STRAIN;

BIAXIAL TENSILE STRAIN; CARTESIANS; DEVICE APPLICATION; HOLE TRANSPORTS; MOBILITY ENHANCEMENT; NONLINEAR TRANSPORT; SATURATION VELOCITY; STRAINED-SI;

STRAINED SILICON;

EID: 0348153063     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020709004971     Document Type: Article

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