Calculation of Hyperfine Constants of Defects in 4H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 511-514

  Gali, A ^a   Deak P ^a   Son, N T ^b   Janzen E ^b   Von Bardeleben, H J ^c   Monge, Jean Louis ^c  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

Defects; Hyperfine Constants; Theory

Indexed keywords

ANNEALING; DEFECTS; DIFFUSION; ELECTRON SPIN RESONANCE SPECTROSCOPY;

HYPERFINE CONSTANTS;

SILICON CARBIDE;

EID: 0242496546     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.511     Document Type: Conference Paper

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