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Volumn 210, Issue 1, 1998, Pages 13-29

Neutral Vacancies in Group-IV Semiconductors

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EID: 0345777644     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199811)210:1<13::AID-PSSB13>3.0.CO;2-P     Document Type: Article
Times cited : (52)

References (66)
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    • Troxell, J.R.1    Watkins, G.D.2
  • 4
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    • Ed. S.T. PANTELIDES, Gordon & Breach, Philadelphia
    • G.D. WATKINS, in: Deep Centers in Semiconductors, Ed. S.T. PANTELIDES, Gordon & Breach, Philadelphia 1992 (p. 177).
    • (1992) Deep Centers in Semiconductors , pp. 177
    • Watkins, G.D.1
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    • J. BERNHOLC, N.O. LIPARI, and S.T. PANTELIDES, Phys. Rev. Lett. 41, 892 (1978); Phys. Rev. B 19, 4965 (1979).
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    • G.A. BARAFF and M. SCHLÜTER, Phys. Rev. Lett. 41, 892 (1978); Phys. Rev. B 19, 4965 (1979).
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    • G. KRESSE and J. HAFNER, Phys. Rev. B 47, R558 (1993); J. Phys.: Condensed Matter 6, 8245 (1994)
    • (1994) J. Phys.: Condensed Matter , vol.6 , pp. 8245


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.