Photoluminescence of electron-irradiated (formula presented)

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 12, 1999, Pages 8008-8014

  Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000705709     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.8008     Document Type: Article

References (23)

1. G. L. Harris, in Properties of Silicon Carbide, edited by G. L. Harris (INSPEC, London, 1995), p. 153.
2. H. Itoh, A. Kawasuso, T. Oshmima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura, and S. Yoshida, Phys. Status Solidi A162, 173 (1997).
3. J. Schneider and K. Maier, Physica B185, 199 (1993).
4. T. Wimbauer, D. Volm, B K. Meyer, A. Hofstätter, and A. Scharman, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2645.
5. L. A. Balona and J H N. Loubster, J. Phys. C3, 2344 (1970).
6. W. J. Choyke, Inst. Phys. Conf. Ser.31, 58 (1977).
7. W. J. Choyke, in The Physics and Chemistry of Carbides, Nitrides and Borides, Vol. 185 of NATO Advanced Study Institute Series E: Applied Sciences, edited by Robert Freer (Kluwer Academic, Dordrecht, 1990), p. 563.
8. L. Patrick and W J. Choyke, Phys. Rev. B5, 3253 (1972).
9. V. S. Vavilov, Yu. A. Vodakov, A I. Ivanov, E N. Mokhov, A D. Roenkov, M V. Chukichev, and R G. Verenchikova, Sov. Phys. Semicond.25, 460 (1991).
10. H. Itoh, M. Yoshikawa, I. Nashiyama, H. Okumura, S. Misakawa, and S. Yoshida, J. Appl. Phys.77, 837 (1995).
11. N. T. Son, E. Sörman, M. Singh, W M. Chen, C. Hallin, O. Kordina, B. Monemar, J L. Lindström, and E. Janzén, Diamond Relat. Mater.6, 1378 (1997).
12. E. Sörman, W M. Chen, N T. Son, C. Hallin, J L. Lindström, B. Monemar, and E. Janzén, in Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, 1997, edited by G. Pensl, H. Morkoç, B. Monemar, and E. Janzén [Mater. Sci. Forum264-268, 473 (1998)].
13. N. T. Son (private communication).
14. N. T. Son, E. Sörman, W M. Chen, M. Singh, C. Hallin, O. Kordina, B. Monemar, E. Janzén, and J L. Lindström, J. Appl. Phys.79, 3784 (1996).
15. E. Sörman, N T. Son, W M. Chen, J L. Lindström, O. Kordina, and E. Janzén, in Proceedings of the 23rd International Conference on the Physics of Semiconductors (Ref. 4), p. 2649.
16. E. Sörman, N T. Son, W M. Chen, J L. Lindström, and E. Janzén, in Proceedings of the 19th International Conference on Defects in Semiconductors, Portugal, 1997, edited by G. Davies and M. H. Nazaré [Mater. Sci. Forum258-263, 685 (1997)].
17. I. G. Ivanov, A. Henry, U. Lindefelt, C. Persson, T. Egilsson, O. Kordina, C. Hallin, B. Monemar, and E. Janzén, in Proceedings of the 23rd International Conference on the Physics of Semiconductors (Ref. 4), p. 233.
18. T. Egilsson, P. Bergman, I G. Ivanov, A. Henry, and E. Janzén, Phys. Rev. B59, 1956 (1999).
19. The lifetime measurements were made by Dr. Peder Bergman at Linköping University. The experimental conditions were the same as those described in Ref. 18.
20. J. P. Bergman, O. Kordina, and E. Janzén, Phys. Status Solidi A162, 65 (1997).
21. P. J. Dean and D C. Herbert, in Excitons, edited by K. Cho, Topics in Current Physics Vol. 14 (Springer-Verlag, Berlin, 1979), p. 55.
22. A. Kawasuso, H. Itoh, D. Cha, and S. Okada, in Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, 1997 (Ref. 12), p. 611.
23. D. Cha, H. Itoh, N. Morishita, A. Kawasuso, T. Ohshima, Y. Watanabe, J. Ko, K. Lee, and I. Nashiyama, in Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, 1997 (Ref. 12), p. 615.