Intrinsic defect complexes in α-SiC: the formation of antisite pairs

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 435-438

  Rauls, E ^a   Hajnal, Z ^a,b   Gali, A ^c   Deak P ^c   Frauenheim, Th ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; ELECTRONIC PROPERTIES; ENERGY GAP; PROBABILITY DENSITY FUNCTION;

ANTISITE PAIRS; DIFFUSION BARRIER; FORMATION ENERGY;

SILICON CARBIDE;

EID: 0007389781     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.435     Document Type: Article

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