(Ba,Sr)TiO3 thin films: Preparation, properties and reliability

Ferroelectrics

Volumn 232, Issue 1-4, 1999, Pages 1-13

  Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

BST; Properties; Reliability; Thin films

Indexed keywords

EID: 0343386397     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199908015764     Document Type: Article

References (40)

1. T. Eimori et. al., IEDM Tech. Digest, 631 (1993).
2. Y. Ohno et. al., Symp. on VLSI Tech. Digest, 149 (1994).
3. M. S. Tsai, et. al., J. Appl. Phys., 82 (7), 3482 (1997).
4. S. Yamamichi et. al., IEEE Trans. Electron Devices, 44, 1076 (1997).
5. T. Horikawa et. al., IEICE Trans. Electron, vol. E77-C, 477 (1994).
6. T. Horikawa et. al., Jpn. J. Appl. Phys., vol. 32, No. 9B, 4126 (1993).
7. K. Koyama et. al., IEDM Tech. Dig., 283 (1991).
8. W. J. Lee et. al., Jpn. J. Appl. Phys., 34, Part 1, 196 (1995).
9. C. M. Chu and P. Lin, Appl. Phys. Lett., 70(2), 249 (1997).
10. M. Izuha et. al., Appl. Phys. Lett., 70 (11), 1405 (1997).
11. H. J. Cho et. al., Jpn. J. Appl. Phys., 36, Part 2, 7A, L874 (1997).
12. C. M. Chu and P. Lin, Appl. Phys. Lett., 72, 1241 (1998).
13. M. Izuha, et. al., Jpn. J. Appl. Phys., Vol. 36, Part 1, 9B, 5866 (1997).
14. S. I. Ohfuji et. al., Jpn. J Appl. Phys., Vol. 36, Part 1, 9B, 5854 (1997).
15. P. Bhattacharya, et. al., Jpn. J. Appl. Phys., Vol. 33, 5231 (1994).
16. S. Hayashi et. al., VLSI Tech. Dig., 153 (1994).
17. T. S. Chen et. al., IEDM Tech. Dig., 679 (1996).
18. S. Yamamichi et. al., IEDM, 119 (1995).
19. S. Sone et. al., Jpn. J. Appl. Phys., Vol. 35, Part 1, No. 9B, 5089 (1996).
20. M. Yamamuka et al., Jpn. J. Appl. Phys., Vol. 35, 4B, 2530 (1996).
21. T. Kawahara et. al., Jpn. J. Appl. Phys., Vol. 33, 9B, 5129 (1994).
22. Y. C. Choi, et. al., Jpn. J. Appl. Phys., Vol. 36, Part 1, 11, 6824 (1997).
23. E. Fiujii et. al., IEDM Tech. Dig., 261 (1992).
24. Y. P. Wang and T. Y. Tseng, J. Appl. Phys., 81 (10), 6762 (1997).
25. J. H. Joo et. al., Appl. Phys. Lett., 70, 3053 (1997).
26. S. O. Park et. al., Jpn. J. Appl. Phys., Vol. 35, No. 2B, 1548 (1996).
27. T. Horikawa et. al., IEICE Trans. Electron., E81-C, 4, 497 (1998).
28. C. S. Hwang et. al., Appl. Phys. Lett., 67, 2819 (1995).
29. S. B. Krupanidhi and C. J. Peng, Thin Solid Films, 305, 144 (1997).
30. T. G. In, S. Baik and S. Kim, J. Mater. Res., Vol. 13, No. 4, 990 (1998).
31. W. J. Lee et. al., J. Appl. Phys., 80 (10), 5891 (1996).
32. G. W. Dietz et. al., J. Appl. Phys., 82 (5), 2359 (1997).
33. M. S. Tsai and T. Y. Tseng, Mater. Chem. and Phys., Vol. 57, 47 (1998).
34. S. H. Paek et. al., Jpn. J. Appl Phys., 35, 11, 5757 (1996).
35. Y. Fukuda et. al., Jpn. J. Appl. Phys., 35, 9B, 5178 (1996).
36. T. Horikawa et. al., Jpn. J. Appl. Phys., 34, Part 1, 9B, 5478 (1995).
37. R. Waser, in Science and Technology of Electroceramic Thin Films, edited by O. Auciello and R. Waser (Kluwer Academic Publishers, Dordrecht, 1995), P.223.
38. Y. P. Wang and T. Y. Tseng, Thin Solid Films, in print.
39. S. Yamamichi et. al., IEDM, 261 (1997).
40. M. Copel et. al., Appl. Phys. Lett., Vol. 73, No. 13, 1832 (1998).