Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 5178-5180

  Fukuda, Yukio ^a   Numata, Ken ^a   Aoki, Katsuhiro ^a   Nishimura, Akitoshi ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Ba1 xSrxTiO3; Dielectric relaxation; Oxygen vacancy; Thin film capacitor

Indexed keywords

OXYGEN VACANCY; THIN-FILM CAPACITOR;

ANNEALING; CAPACITORS; EXPERIMENTS; OXIDES; PEROVSKITE; THIN FILMS;

DIELECTRIC RELAXATION;

EID: 0030232826     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5178     Document Type: Article

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